android_kernel_xiaomi_sm8350/include/linux/mtd/mtd.h

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/*
* $Id: mtd.h,v 1.61 2005/11/07 11:14:54 gleixner Exp $
*
* Copyright (C) 1999-2003 David Woodhouse <dwmw2@infradead.org> et al.
*
* Released under GPL
*/
#ifndef __MTD_MTD_H__
#define __MTD_MTD_H__
#ifndef __KERNEL__
#error This is a kernel header. Perhaps include mtd-user.h instead?
#endif
#include <linux/types.h>
#include <linux/module.h>
#include <linux/uio.h>
#include <linux/notifier.h>
#include <linux/mtd/compatmac.h>
#include <mtd/mtd-abi.h>
#define MTD_CHAR_MAJOR 90
#define MTD_BLOCK_MAJOR 31
#define MAX_MTD_DEVICES 32
#define MTD_ERASE_PENDING 0x01
#define MTD_ERASING 0x02
#define MTD_ERASE_SUSPEND 0x04
#define MTD_ERASE_DONE 0x08
#define MTD_ERASE_FAILED 0x10
/* If the erase fails, fail_addr might indicate exactly which block failed. If
fail_addr = 0xffffffff, the failure was not at the device level or was not
specific to any particular block. */
struct erase_info {
struct mtd_info *mtd;
u_int32_t addr;
u_int32_t len;
u_int32_t fail_addr;
u_long time;
u_long retries;
u_int dev;
u_int cell;
void (*callback) (struct erase_info *self);
u_long priv;
u_char state;
struct erase_info *next;
};
struct mtd_erase_region_info {
u_int32_t offset; /* At which this region starts, from the beginning of the MTD */
u_int32_t erasesize; /* For this region */
u_int32_t numblocks; /* Number of blocks of erasesize in this region */
};
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-28 21:26:58 -04:00
/*
* oob operation modes
*
* MTD_OOB_PLACE: oob data are placed at the given offset
* MTD_OOB_AUTO: oob data are automatically placed at the free areas
* which are defined by the ecclayout
* MTD_OOB_RAW: mode to read raw data+oob in one chunk. The oob data
* is inserted into the data. Thats a raw image of the
* flash contents.
*/
typedef enum {
MTD_OOB_PLACE,
MTD_OOB_AUTO,
MTD_OOB_RAW,
} mtd_oob_mode_t;
/**
* struct mtd_oob_ops - oob operation operands
* @mode: operation mode
*
* @len: number of data bytes to write/read
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-28 21:26:58 -04:00
*
* @retlen: number of data bytes written/read
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-28 21:26:58 -04:00
*
* @ooblen: number of oob bytes to write/read
* @oobretlen: number of oob bytes written/read
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-28 21:26:58 -04:00
* @ooboffs: offset of oob data in the oob area (only relevant when
* mode = MTD_OOB_PLACE)
* @datbuf: data buffer - if NULL only oob data are read/written
* @oobbuf: oob data buffer
*/
struct mtd_oob_ops {
mtd_oob_mode_t mode;
size_t len;
size_t retlen;
size_t ooblen;
size_t oobretlen;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-28 21:26:58 -04:00
uint32_t ooboffs;
uint8_t *datbuf;
uint8_t *oobbuf;
};
struct mtd_info {
u_char type;
u_int32_t flags;
u_int32_t size; // Total size of the MTD
/* "Major" erase size for the device. Naïve users may take this
* to be the only erase size available, or may use the more detailed
* information below if they desire
*/
u_int32_t erasesize;
/* Minimal writable flash unit size. In case of NOR flash it is 1 (even
* though individual bits can be cleared), in case of NAND flash it is
* one NAND page (or half, or one-fourths of it), in case of ECC-ed NOR
* it is of ECC block size, etc. It is illegal to have writesize = 0.
* Any driver registering a struct mtd_info must ensure a writesize of
* 1 or larger.
*/
u_int32_t writesize;
u_int32_t oobsize; // Amount of OOB data per block (e.g. 16)
u_int32_t ecctype;
u_int32_t eccsize;
/*
* Reuse some of the above unused fields in the case of NOR flash
* with configurable programming regions to avoid modifying the
* user visible structure layout/size. Only valid when the
* MTD_PROGRAM_REGIONS flag is set.
* (Maybe we should have an union for those?)
*/
#define MTD_PROGREGION_CTRLMODE_VALID(mtd) (mtd)->oobsize
#define MTD_PROGREGION_CTRLMODE_INVALID(mtd) (mtd)->ecctype
// Kernel-only stuff starts here.
char *name;
int index;
/* ecc layout structure pointer - read only ! */
struct nand_ecclayout *ecclayout;
/* Data for variable erase regions. If numeraseregions is zero,
* it means that the whole device has erasesize as given above.
*/
int numeraseregions;
struct mtd_erase_region_info *eraseregions;
/* This really shouldn't be here. It can go away in 2.5 */
u_int32_t bank_size;
int (*erase) (struct mtd_info *mtd, struct erase_info *instr);
/* This stuff for eXecute-In-Place */
int (*point) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char **mtdbuf);
/* We probably shouldn't allow XIP if the unpoint isn't a NULL */
void (*unpoint) (struct mtd_info *mtd, u_char * addr, loff_t from, size_t len);
int (*read) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
int (*write) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf);
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-28 21:26:58 -04:00
int (*read_oob) (struct mtd_info *mtd, loff_t from,
struct mtd_oob_ops *ops);
int (*write_oob) (struct mtd_info *mtd, loff_t to,
struct mtd_oob_ops *ops);
/*
* Methods to access the protection register area, present in some
* flash devices. The user data is one time programmable but the
* factory data is read only.
*/
int (*get_fact_prot_info) (struct mtd_info *mtd, struct otp_info *buf, size_t len);
int (*read_fact_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
int (*get_user_prot_info) (struct mtd_info *mtd, struct otp_info *buf, size_t len);
int (*read_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
int (*write_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
int (*lock_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len);
/* kvec-based read/write methods.
NB: The 'count' parameter is the number of _vectors_, each of
which contains an (ofs, len) tuple.
*/
int (*writev) (struct mtd_info *mtd, const struct kvec *vecs, unsigned long count, loff_t to, size_t *retlen);
/* Sync */
void (*sync) (struct mtd_info *mtd);
/* Chip-supported device locking */
int (*lock) (struct mtd_info *mtd, loff_t ofs, size_t len);
int (*unlock) (struct mtd_info *mtd, loff_t ofs, size_t len);
/* Power Management functions */
int (*suspend) (struct mtd_info *mtd);
void (*resume) (struct mtd_info *mtd);
/* Bad block management functions */
int (*block_isbad) (struct mtd_info *mtd, loff_t ofs);
int (*block_markbad) (struct mtd_info *mtd, loff_t ofs);
struct notifier_block reboot_notifier; /* default mode before reboot */
/* ECC status information */
struct mtd_ecc_stats ecc_stats;
void *priv;
struct module *owner;
int usecount;
};
/* Kernel-side ioctl definitions */
extern int add_mtd_device(struct mtd_info *mtd);
extern int del_mtd_device (struct mtd_info *mtd);
extern struct mtd_info *get_mtd_device(struct mtd_info *mtd, int num);
extern void put_mtd_device(struct mtd_info *mtd);
struct mtd_notifier {
void (*add)(struct mtd_info *mtd);
void (*remove)(struct mtd_info *mtd);
struct list_head list;
};
extern void register_mtd_user (struct mtd_notifier *new);
extern int unregister_mtd_user (struct mtd_notifier *old);
int default_mtd_writev(struct mtd_info *mtd, const struct kvec *vecs,
unsigned long count, loff_t to, size_t *retlen);
int default_mtd_readv(struct mtd_info *mtd, struct kvec *vecs,
unsigned long count, loff_t from, size_t *retlen);
#ifdef CONFIG_MTD_PARTITIONS
void mtd_erase_callback(struct erase_info *instr);
#else
static inline void mtd_erase_callback(struct erase_info *instr)
{
if (instr->callback)
instr->callback(instr);
}
#endif
/*
* Debugging macro and defines
*/
#define MTD_DEBUG_LEVEL0 (0) /* Quiet */
#define MTD_DEBUG_LEVEL1 (1) /* Audible */
#define MTD_DEBUG_LEVEL2 (2) /* Loud */
#define MTD_DEBUG_LEVEL3 (3) /* Noisy */
#ifdef CONFIG_MTD_DEBUG
#define DEBUG(n, args...) \
do { \
if (n <= CONFIG_MTD_DEBUG_VERBOSE) \
printk(KERN_INFO args); \
} while(0)
#else /* CONFIG_MTD_DEBUG */
#define DEBUG(n, args...) do { } while(0)
#endif /* CONFIG_MTD_DEBUG */
#endif /* __MTD_MTD_H__ */