android_kernel_xiaomi_sm8350/include/linux/mtd/nand.h
Thomas Gleixner 0dfc62465e [MTD] NAND: Reorganize chip locking
The code was wrong in several aspects. The locking order was
inconsistent, the device aquire code did not reset a variable
after a wakeup and the wakeup handling was not working for
applications where multiple chips are sharing a single
hardware controller.
When a hardware controller is available the locking is now
reduced to the hardware controller lock and the waitqueue is
moved to the hardware controller structure in order to avoid
a wake_up_all().

The problem was pointed out by Ben Dooks, who also found the
missing variable reset as main cause for his deadlock problem.

Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2005-06-29 14:15:17 +02:00

512 lines
20 KiB
C

/*
* linux/include/linux/mtd/nand.h
*
* Copyright (c) 2000 David Woodhouse <dwmw2@mvhi.com>
* Steven J. Hill <sjhill@realitydiluted.com>
* Thomas Gleixner <tglx@linutronix.de>
*
* $Id: nand.h,v 1.73 2005/05/31 19:39:17 gleixner Exp $
*
* This program is free software; you can redistribute it and/or modify
* it under the terms of the GNU General Public License version 2 as
* published by the Free Software Foundation.
*
* Info:
* Contains standard defines and IDs for NAND flash devices
*
* Changelog:
* 01-31-2000 DMW Created
* 09-18-2000 SJH Moved structure out of the Disk-On-Chip drivers
* so it can be used by other NAND flash device
* drivers. I also changed the copyright since none
* of the original contents of this file are specific
* to DoC devices. David can whack me with a baseball
* bat later if I did something naughty.
* 10-11-2000 SJH Added private NAND flash structure for driver
* 10-24-2000 SJH Added prototype for 'nand_scan' function
* 10-29-2001 TG changed nand_chip structure to support
* hardwarespecific function for accessing control lines
* 02-21-2002 TG added support for different read/write adress and
* ready/busy line access function
* 02-26-2002 TG added chip_delay to nand_chip structure to optimize
* command delay times for different chips
* 04-28-2002 TG OOB config defines moved from nand.c to avoid duplicate
* defines in jffs2/wbuf.c
* 08-07-2002 TG forced bad block location to byte 5 of OOB, even if
* CONFIG_MTD_NAND_ECC_JFFS2 is not set
* 08-10-2002 TG extensions to nand_chip structure to support HW-ECC
*
* 08-29-2002 tglx nand_chip structure: data_poi for selecting
* internal / fs-driver buffer
* support for 6byte/512byte hardware ECC
* read_ecc, write_ecc extended for different oob-layout
* oob layout selections: NAND_NONE_OOB, NAND_JFFS2_OOB,
* NAND_YAFFS_OOB
* 11-25-2002 tglx Added Manufacturer code FUJITSU, NATIONAL
* Split manufacturer and device ID structures
*
* 02-08-2004 tglx added option field to nand structure for chip anomalities
* 05-25-2004 tglx added bad block table support, ST-MICRO manufacturer id
* update of nand_chip structure description
* 01-17-2005 dmarlin added extended commands for AG-AND device and added option
* for BBT_AUTO_REFRESH.
* 01-20-2005 dmarlin added optional pointer to hardware specific callback for
* extra error status checks.
*/
#ifndef __LINUX_MTD_NAND_H
#define __LINUX_MTD_NAND_H
#include <linux/config.h>
#include <linux/wait.h>
#include <linux/spinlock.h>
#include <linux/mtd/mtd.h>
struct mtd_info;
/* Scan and identify a NAND device */
extern int nand_scan (struct mtd_info *mtd, int max_chips);
/* Free resources held by the NAND device */
extern void nand_release (struct mtd_info *mtd);
/* Read raw data from the device without ECC */
extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_t len, size_t ooblen);
/* The maximum number of NAND chips in an array */
#define NAND_MAX_CHIPS 8
/* This constant declares the max. oobsize / page, which
* is supported now. If you add a chip with bigger oobsize/page
* adjust this accordingly.
*/
#define NAND_MAX_OOBSIZE 64
/*
* Constants for hardware specific CLE/ALE/NCE function
*/
/* Select the chip by setting nCE to low */
#define NAND_CTL_SETNCE 1
/* Deselect the chip by setting nCE to high */
#define NAND_CTL_CLRNCE 2
/* Select the command latch by setting CLE to high */
#define NAND_CTL_SETCLE 3
/* Deselect the command latch by setting CLE to low */
#define NAND_CTL_CLRCLE 4
/* Select the address latch by setting ALE to high */
#define NAND_CTL_SETALE 5
/* Deselect the address latch by setting ALE to low */
#define NAND_CTL_CLRALE 6
/* Set write protection by setting WP to high. Not used! */
#define NAND_CTL_SETWP 7
/* Clear write protection by setting WP to low. Not used! */
#define NAND_CTL_CLRWP 8
/*
* Standard NAND flash commands
*/
#define NAND_CMD_READ0 0
#define NAND_CMD_READ1 1
#define NAND_CMD_PAGEPROG 0x10
#define NAND_CMD_READOOB 0x50
#define NAND_CMD_ERASE1 0x60
#define NAND_CMD_STATUS 0x70
#define NAND_CMD_STATUS_MULTI 0x71
#define NAND_CMD_SEQIN 0x80
#define NAND_CMD_READID 0x90
#define NAND_CMD_ERASE2 0xd0
#define NAND_CMD_RESET 0xff
/* Extended commands for large page devices */
#define NAND_CMD_READSTART 0x30
#define NAND_CMD_CACHEDPROG 0x15
/* Extended commands for AG-AND device */
/*
* Note: the command for NAND_CMD_DEPLETE1 is really 0x00 but
* there is no way to distinguish that from NAND_CMD_READ0
* until the remaining sequence of commands has been completed
* so add a high order bit and mask it off in the command.
*/
#define NAND_CMD_DEPLETE1 0x100
#define NAND_CMD_DEPLETE2 0x38
#define NAND_CMD_STATUS_MULTI 0x71
#define NAND_CMD_STATUS_ERROR 0x72
/* multi-bank error status (banks 0-3) */
#define NAND_CMD_STATUS_ERROR0 0x73
#define NAND_CMD_STATUS_ERROR1 0x74
#define NAND_CMD_STATUS_ERROR2 0x75
#define NAND_CMD_STATUS_ERROR3 0x76
#define NAND_CMD_STATUS_RESET 0x7f
#define NAND_CMD_STATUS_CLEAR 0xff
/* Status bits */
#define NAND_STATUS_FAIL 0x01
#define NAND_STATUS_FAIL_N1 0x02
#define NAND_STATUS_TRUE_READY 0x20
#define NAND_STATUS_READY 0x40
#define NAND_STATUS_WP 0x80
/*
* Constants for ECC_MODES
*/
/* No ECC. Usage is not recommended ! */
#define NAND_ECC_NONE 0
/* Software ECC 3 byte ECC per 256 Byte data */
#define NAND_ECC_SOFT 1
/* Hardware ECC 3 byte ECC per 256 Byte data */
#define NAND_ECC_HW3_256 2
/* Hardware ECC 3 byte ECC per 512 Byte data */
#define NAND_ECC_HW3_512 3
/* Hardware ECC 3 byte ECC per 512 Byte data */
#define NAND_ECC_HW6_512 4
/* Hardware ECC 8 byte ECC per 512 Byte data */
#define NAND_ECC_HW8_512 6
/* Hardware ECC 12 byte ECC per 2048 Byte data */
#define NAND_ECC_HW12_2048 7
/*
* Constants for Hardware ECC
*/
/* Reset Hardware ECC for read */
#define NAND_ECC_READ 0
/* Reset Hardware ECC for write */
#define NAND_ECC_WRITE 1
/* Enable Hardware ECC before syndrom is read back from flash */
#define NAND_ECC_READSYN 2
/* Bit mask for flags passed to do_nand_read_ecc */
#define NAND_GET_DEVICE 0x80
/* Option constants for bizarre disfunctionality and real
* features
*/
/* Chip can not auto increment pages */
#define NAND_NO_AUTOINCR 0x00000001
/* Buswitdh is 16 bit */
#define NAND_BUSWIDTH_16 0x00000002
/* Device supports partial programming without padding */
#define NAND_NO_PADDING 0x00000004
/* Chip has cache program function */
#define NAND_CACHEPRG 0x00000008
/* Chip has copy back function */
#define NAND_COPYBACK 0x00000010
/* AND Chip which has 4 banks and a confusing page / block
* assignment. See Renesas datasheet for further information */
#define NAND_IS_AND 0x00000020
/* Chip has a array of 4 pages which can be read without
* additional ready /busy waits */
#define NAND_4PAGE_ARRAY 0x00000040
/* Chip requires that BBT is periodically rewritten to prevent
* bits from adjacent blocks from 'leaking' in altering data.
* This happens with the Renesas AG-AND chips, possibly others. */
#define BBT_AUTO_REFRESH 0x00000080
/* Options valid for Samsung large page devices */
#define NAND_SAMSUNG_LP_OPTIONS \
(NAND_NO_PADDING | NAND_CACHEPRG | NAND_COPYBACK)
/* Macros to identify the above */
#define NAND_CANAUTOINCR(chip) (!(chip->options & NAND_NO_AUTOINCR))
#define NAND_MUST_PAD(chip) (!(chip->options & NAND_NO_PADDING))
#define NAND_HAS_CACHEPROG(chip) ((chip->options & NAND_CACHEPRG))
#define NAND_HAS_COPYBACK(chip) ((chip->options & NAND_COPYBACK))
/* Mask to zero out the chip options, which come from the id table */
#define NAND_CHIPOPTIONS_MSK (0x0000ffff & ~NAND_NO_AUTOINCR)
/* Non chip related options */
/* Use a flash based bad block table. This option is passed to the
* default bad block table function. */
#define NAND_USE_FLASH_BBT 0x00010000
/* The hw ecc generator provides a syndrome instead a ecc value on read
* This can only work if we have the ecc bytes directly behind the
* data bytes. Applies for DOC and AG-AND Renesas HW Reed Solomon generators */
#define NAND_HWECC_SYNDROME 0x00020000
/* This option skips the bbt scan during initialization. */
#define NAND_SKIP_BBTSCAN 0x00040000
/* Options set by nand scan */
/* Nand scan has allocated oob_buf */
#define NAND_OOBBUF_ALLOC 0x40000000
/* Nand scan has allocated data_buf */
#define NAND_DATABUF_ALLOC 0x80000000
/*
* nand_state_t - chip states
* Enumeration for NAND flash chip state
*/
typedef enum {
FL_READY,
FL_READING,
FL_WRITING,
FL_ERASING,
FL_SYNCING,
FL_CACHEDPRG,
} nand_state_t;
/* Keep gcc happy */
struct nand_chip;
/**
* struct nand_hw_control - Control structure for hardware controller (e.g ECC generator) shared among independend devices
* @lock: protection lock
* @active: the mtd device which holds the controller currently
* @wq: wait queue to sleep on if a NAND operation is in progress
* used instead of the per chip wait queue when a hw controller is available
*/
struct nand_hw_control {
spinlock_t lock;
struct nand_chip *active;
wait_queue_head_t wq;
};
/**
* struct nand_chip - NAND Private Flash Chip Data
* @IO_ADDR_R: [BOARDSPECIFIC] address to read the 8 I/O lines of the flash device
* @IO_ADDR_W: [BOARDSPECIFIC] address to write the 8 I/O lines of the flash device
* @read_byte: [REPLACEABLE] read one byte from the chip
* @write_byte: [REPLACEABLE] write one byte to the chip
* @read_word: [REPLACEABLE] read one word from the chip
* @write_word: [REPLACEABLE] write one word to the chip
* @write_buf: [REPLACEABLE] write data from the buffer to the chip
* @read_buf: [REPLACEABLE] read data from the chip into the buffer
* @verify_buf: [REPLACEABLE] verify buffer contents against the chip data
* @select_chip: [REPLACEABLE] select chip nr
* @block_bad: [REPLACEABLE] check, if the block is bad
* @block_markbad: [REPLACEABLE] mark the block bad
* @hwcontrol: [BOARDSPECIFIC] hardwarespecific function for accesing control-lines
* @dev_ready: [BOARDSPECIFIC] hardwarespecific function for accesing device ready/busy line
* If set to NULL no access to ready/busy is available and the ready/busy information
* is read from the chip status register
* @cmdfunc: [REPLACEABLE] hardwarespecific function for writing commands to the chip
* @waitfunc: [REPLACEABLE] hardwarespecific function for wait on ready
* @calculate_ecc: [REPLACEABLE] function for ecc calculation or readback from ecc hardware
* @correct_data: [REPLACEABLE] function for ecc correction, matching to ecc generator (sw/hw)
* @enable_hwecc: [BOARDSPECIFIC] function to enable (reset) hardware ecc generator. Must only
* be provided if a hardware ECC is available
* @erase_cmd: [INTERN] erase command write function, selectable due to AND support
* @scan_bbt: [REPLACEABLE] function to scan bad block table
* @eccmode: [BOARDSPECIFIC] mode of ecc, see defines
* @eccsize: [INTERN] databytes used per ecc-calculation
* @eccbytes: [INTERN] number of ecc bytes per ecc-calculation step
* @eccsteps: [INTERN] number of ecc calculation steps per page
* @chip_delay: [BOARDSPECIFIC] chip dependent delay for transfering data from array to read regs (tR)
* @chip_lock: [INTERN] spinlock used to protect access to this structure and the chip
* @wq: [INTERN] wait queue to sleep on if a NAND operation is in progress
* @state: [INTERN] the current state of the NAND device
* @page_shift: [INTERN] number of address bits in a page (column address bits)
* @phys_erase_shift: [INTERN] number of address bits in a physical eraseblock
* @bbt_erase_shift: [INTERN] number of address bits in a bbt entry
* @chip_shift: [INTERN] number of address bits in one chip
* @data_buf: [INTERN] internal buffer for one page + oob
* @oob_buf: [INTERN] oob buffer for one eraseblock
* @oobdirty: [INTERN] indicates that oob_buf must be reinitialized
* @data_poi: [INTERN] pointer to a data buffer
* @options: [BOARDSPECIFIC] various chip options. They can partly be set to inform nand_scan about
* special functionality. See the defines for further explanation
* @badblockpos: [INTERN] position of the bad block marker in the oob area
* @numchips: [INTERN] number of physical chips
* @chipsize: [INTERN] the size of one chip for multichip arrays
* @pagemask: [INTERN] page number mask = number of (pages / chip) - 1
* @pagebuf: [INTERN] holds the pagenumber which is currently in data_buf
* @autooob: [REPLACEABLE] the default (auto)placement scheme
* @bbt: [INTERN] bad block table pointer
* @bbt_td: [REPLACEABLE] bad block table descriptor for flash lookup
* @bbt_md: [REPLACEABLE] bad block table mirror descriptor
* @badblock_pattern: [REPLACEABLE] bad block scan pattern used for initial bad block scan
* @controller: [OPTIONAL] a pointer to a hardware controller structure which is shared among multiple independend devices
* @priv: [OPTIONAL] pointer to private chip date
* @errstat: [OPTIONAL] hardware specific function to perform additional error status checks
* (determine if errors are correctable)
*/
struct nand_chip {
void __iomem *IO_ADDR_R;
void __iomem *IO_ADDR_W;
u_char (*read_byte)(struct mtd_info *mtd);
void (*write_byte)(struct mtd_info *mtd, u_char byte);
u16 (*read_word)(struct mtd_info *mtd);
void (*write_word)(struct mtd_info *mtd, u16 word);
void (*write_buf)(struct mtd_info *mtd, const u_char *buf, int len);
void (*read_buf)(struct mtd_info *mtd, u_char *buf, int len);
int (*verify_buf)(struct mtd_info *mtd, const u_char *buf, int len);
void (*select_chip)(struct mtd_info *mtd, int chip);
int (*block_bad)(struct mtd_info *mtd, loff_t ofs, int getchip);
int (*block_markbad)(struct mtd_info *mtd, loff_t ofs);
void (*hwcontrol)(struct mtd_info *mtd, int cmd);
int (*dev_ready)(struct mtd_info *mtd);
void (*cmdfunc)(struct mtd_info *mtd, unsigned command, int column, int page_addr);
int (*waitfunc)(struct mtd_info *mtd, struct nand_chip *this, int state);
int (*calculate_ecc)(struct mtd_info *mtd, const u_char *dat, u_char *ecc_code);
int (*correct_data)(struct mtd_info *mtd, u_char *dat, u_char *read_ecc, u_char *calc_ecc);
void (*enable_hwecc)(struct mtd_info *mtd, int mode);
void (*erase_cmd)(struct mtd_info *mtd, int page);
int (*scan_bbt)(struct mtd_info *mtd);
int eccmode;
int eccsize;
int eccbytes;
int eccsteps;
int chip_delay;
spinlock_t chip_lock;
wait_queue_head_t wq;
nand_state_t state;
int page_shift;
int phys_erase_shift;
int bbt_erase_shift;
int chip_shift;
u_char *data_buf;
u_char *oob_buf;
int oobdirty;
u_char *data_poi;
unsigned int options;
int badblockpos;
int numchips;
unsigned long chipsize;
int pagemask;
int pagebuf;
struct nand_oobinfo *autooob;
uint8_t *bbt;
struct nand_bbt_descr *bbt_td;
struct nand_bbt_descr *bbt_md;
struct nand_bbt_descr *badblock_pattern;
struct nand_hw_control *controller;
void *priv;
int (*errstat)(struct mtd_info *mtd, struct nand_chip *this, int state, int status, int page);
};
/*
* NAND Flash Manufacturer ID Codes
*/
#define NAND_MFR_TOSHIBA 0x98
#define NAND_MFR_SAMSUNG 0xec
#define NAND_MFR_FUJITSU 0x04
#define NAND_MFR_NATIONAL 0x8f
#define NAND_MFR_RENESAS 0x07
#define NAND_MFR_STMICRO 0x20
#define NAND_MFR_HYNIX 0xad
/**
* struct nand_flash_dev - NAND Flash Device ID Structure
*
* @name: Identify the device type
* @id: device ID code
* @pagesize: Pagesize in bytes. Either 256 or 512 or 0
* If the pagesize is 0, then the real pagesize
* and the eraseize are determined from the
* extended id bytes in the chip
* @erasesize: Size of an erase block in the flash device.
* @chipsize: Total chipsize in Mega Bytes
* @options: Bitfield to store chip relevant options
*/
struct nand_flash_dev {
char *name;
int id;
unsigned long pagesize;
unsigned long chipsize;
unsigned long erasesize;
unsigned long options;
};
/**
* struct nand_manufacturers - NAND Flash Manufacturer ID Structure
* @name: Manufacturer name
* @id: manufacturer ID code of device.
*/
struct nand_manufacturers {
int id;
char * name;
};
extern struct nand_flash_dev nand_flash_ids[];
extern struct nand_manufacturers nand_manuf_ids[];
/**
* struct nand_bbt_descr - bad block table descriptor
* @options: options for this descriptor
* @pages: the page(s) where we find the bbt, used with option BBT_ABSPAGE
* when bbt is searched, then we store the found bbts pages here.
* Its an array and supports up to 8 chips now
* @offs: offset of the pattern in the oob area of the page
* @veroffs: offset of the bbt version counter in the oob are of the page
* @version: version read from the bbt page during scan
* @len: length of the pattern, if 0 no pattern check is performed
* @maxblocks: maximum number of blocks to search for a bbt. This number of
* blocks is reserved at the end of the device where the tables are
* written.
* @reserved_block_code: if non-0, this pattern denotes a reserved (rather than
* bad) block in the stored bbt
* @pattern: pattern to identify bad block table or factory marked good /
* bad blocks, can be NULL, if len = 0
*
* Descriptor for the bad block table marker and the descriptor for the
* pattern which identifies good and bad blocks. The assumption is made
* that the pattern and the version count are always located in the oob area
* of the first block.
*/
struct nand_bbt_descr {
int options;
int pages[NAND_MAX_CHIPS];
int offs;
int veroffs;
uint8_t version[NAND_MAX_CHIPS];
int len;
int maxblocks;
int reserved_block_code;
uint8_t *pattern;
};
/* Options for the bad block table descriptors */
/* The number of bits used per block in the bbt on the device */
#define NAND_BBT_NRBITS_MSK 0x0000000F
#define NAND_BBT_1BIT 0x00000001
#define NAND_BBT_2BIT 0x00000002
#define NAND_BBT_4BIT 0x00000004
#define NAND_BBT_8BIT 0x00000008
/* The bad block table is in the last good block of the device */
#define NAND_BBT_LASTBLOCK 0x00000010
/* The bbt is at the given page, else we must scan for the bbt */
#define NAND_BBT_ABSPAGE 0x00000020
/* The bbt is at the given page, else we must scan for the bbt */
#define NAND_BBT_SEARCH 0x00000040
/* bbt is stored per chip on multichip devices */
#define NAND_BBT_PERCHIP 0x00000080
/* bbt has a version counter at offset veroffs */
#define NAND_BBT_VERSION 0x00000100
/* Create a bbt if none axists */
#define NAND_BBT_CREATE 0x00000200
/* Search good / bad pattern through all pages of a block */
#define NAND_BBT_SCANALLPAGES 0x00000400
/* Scan block empty during good / bad block scan */
#define NAND_BBT_SCANEMPTY 0x00000800
/* Write bbt if neccecary */
#define NAND_BBT_WRITE 0x00001000
/* Read and write back block contents when writing bbt */
#define NAND_BBT_SAVECONTENT 0x00002000
/* Search good / bad pattern on the first and the second page */
#define NAND_BBT_SCAN2NDPAGE 0x00004000
/* The maximum number of blocks to scan for a bbt */
#define NAND_BBT_SCAN_MAXBLOCKS 4
extern int nand_scan_bbt (struct mtd_info *mtd, struct nand_bbt_descr *bd);
extern int nand_update_bbt (struct mtd_info *mtd, loff_t offs);
extern int nand_default_bbt (struct mtd_info *mtd);
extern int nand_isbad_bbt (struct mtd_info *mtd, loff_t offs, int allowbbt);
extern int nand_erase_nand (struct mtd_info *mtd, struct erase_info *instr, int allowbbt);
extern int nand_do_read_ecc (struct mtd_info *mtd, loff_t from, size_t len,
size_t * retlen, u_char * buf, u_char * oob_buf,
struct nand_oobinfo *oobsel, int flags);
/*
* Constants for oob configuration
*/
#define NAND_SMALL_BADBLOCK_POS 5
#define NAND_LARGE_BADBLOCK_POS 0
#endif /* __LINUX_MTD_NAND_H */